any changing of specification will not be informed individual MMBD4448DW surface mount switching diode array .055(1.40) .047(1.20) maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit non-repetitive peak reverse voltage v rm 100 v peak repetitive reverse voltage rms reverse voltage average rectified out current(note 1) v rrm 75 v forward continuous current (note 1) i fm 500 ma thermal resistance junction to ambient air (note1) r thja 625 c/w storage temperature range t stg C 55 to +150 c electrical characteristics (t a = 25 c unless otherwise noted) (each diode) characteristic symbol min ma xunit reverse breakdown voltage (note 2) v(br)r 75 v forward voltage (note 2) i f=5.0ma 0.62 0.72 if=10ma v f 0.855 if=50ma 1.0 v if=150ma 1.25 reverse current (note 2) v r=75v vr=75v, tj=150 o c 2.5 ua vr=25v, tj=150 o c i r 30 ua vr=20v 25 na total capacitance v r=0, f=1.0mhz c t 4.0 pf reverse recovery time i f=ir=10ma, irr=0.1xi r,rl=100 ohms t rr 4.0 ns features case: sot-363, molded plastic terminals: solderable per mil-std-202, method 208 polarity: see diagrams below weight: 0.006 grams (approx.) mounting position: any mechanical data fast switching speed ultra-small surface mount package high conductance power dissipation http://www.secosgmbh.com elektronische bauelemente mmbd4448 dw marking: ka3 o 1 2 3 5 6 4 1 2 3 6 5 4 01-j an-2006 rev.b page 1 of 2 v r(rms) i o 50 ua 53 v 250 ma notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad layout note 2. short duration test pulse used to minimize self-heating. sot-363 dimensions in inches and (millimeters) .014(0.35) .006(0.15) .087(2.20) .079(2.00) .026typ (0.65typ) .096(2.45) .085(2.15) .021ref (0.525)ref .018(0.46) .010(0.26) .006(0.15) .003(0.08) .053(1.35) .045(1.15) .043(1.10) .035(0.90) .039(1.00) .035(0.90) .004(0.10) .000(0.00) 8 o o 0 rohs compliant product a suffix of "-c" specifies halogen & lead-free
any changing of specification will not be informed individual MMBD4448DW surface mount switching diode array http://www.secosgmbh.com elektronische bauelemente 01-j an-2006 rev.b page 2 of 2 10 100 1000 1 0.1 0 1.6 1.2 0.4 0.8 i , instantaneous forward current (ma) f v , instantaneous forward voltage (v) f fig. 1 typical forward characteristics t = 125oc a t = -40oc a t = 75oc a t = 25oc a t = 0oc a 0.1 1 10 100 1000 10000 0 20 40 60 80 100 v , reverse voltage (v) r fig. 2 typical reverse characteristics i , instantaneous reverse current (na) r t = -40oc a t = 25oc a t = 75oc a t = 125oc a t = 0oc a 0 50 100 150 200 250 0 100 200 p , power dissipation (mw) d t , ambient temperature ( c) a fig. 4 power derating curve, total package 0 0.5 1 2.5 2 1.5 3 0 10 20 30 40 c , total capacitance (pf) t v , reverse voltage (v) r fig. 3 typical total capacitance vs. reverse voltage f = 1mhz 0 4 6 8 2 10 i , forward current (ma) f fig. 5 reverse recovery time vs forward current. t , reverse recovery time (ns) rr 0 0.5 1.0 1.5 2.0 2.5
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